Imagine Optic's HASO X-EUV wavefront sensor, developed in partnership with LOA and the SOLEIL synchrotron, is the only device of its kind available that offers you the extreme precision and direct measurement functionality needed for today's demanding laboratory and industrial applications.
- Synchrotron and X-fel beam alignment and characterization
- Micro and nano-beam focusing, automatic beam alignment, and high Strehl ratio for adaptive optics
- Perfectly adapted for laboratory applications
- Independent phase and intensity measurement
- Insensitive to vibration
Designed and built in collaboration with our customers and with their needs as the top priority, the HASO X-EUV incorporates our patented rotated square technology to offer high spatial resolution and wide dynamic range, making it the ideal choice for EUV lithography, synchrotron and X-fel beam analysis. When used for adaptive optics, the X-EUV becomes a powerful tool for that provides you with micro and nano-beam focusing, a high Strehl ratio and precise control of the focal spot shape.
When combined with our powerful and easy-to-use software packages, you can easily conduct wavefront acquisition and reconstruction. Additional add-on modules offer features including extended wavefront reconstruction, PSF and MTF measurement, as well as a dynamic library that enables you to build your own software applications using this remarkable device.
Applications include ultra short wavelength beam characterization, adjustment and alignment; adaptive optics and automatic beam alignment; and EUV lithography.
Technical specifications are detailed in the table below. If you would like more information on our HASO wavefront sensors, please call +33 (0)1 64 86 15 60 or e-mail us by clicking here.
| 19.7 x 19.7 mm² |
10.1 x 10.1 mm² |
0.7 x 1.0 mm² |
| 51 x 51 |
75 x 75 |
36 x 48 |
| ± 0.5 m to ± ∞ |
0.4 to 4 m – divergent beam |
±40 mm to ±∞ |
| ~ λ/100 |
~ λ/10 |
0.03 nm |
| ~ λ/50 |
~ λ/4 |
0.05 nm |
| ~ λ/75 |
~ λ/5 |
0.1 µrad |
| 0.05 µrad |
0.05 µrad |
0.1 µrad |
| < 1.10-4 m-1 |
< 2.10-4 m-1 |
| ~ 390 µm |
~ 130 µm |
20 µm |
~2 sec
(@1 MHz digitization) |
~0.6 sec
(@2 MHz digitization) |
17 ms |
| 50 eV - 200 eV (7 nm - 25 nm) |
1 keV – 4 keV (1 nm – 0.3 nm) |
8 KeV - 15 KeV |
| < 55° C / 5° C – 30° C |
| 10-6 mbar |
not vacuum compliant |
| Via controller (100-110-220 or 240 V AC) |
Via Firewire (12 V) |
| PCI board |
Firewire |
|